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| SGS5N150UF IGBT SGS5N150UF General Description Fairchild's Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGS5N150UF is designed for the Switching Power Supply applications. Features * High Speed Switching * Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A * High Input Impedance Application Switching Power Supply - High Input Voltage Off-line Converter C G TO-220F GC E TC = 25C unless otherwise noted E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from Case for 5 Seconds @ TC = 25C @ TC = 100C @ TC = 25C @ TC = 100C SGS5N150UF 1500 20 10 5 20 50 20 -55 to +150 -55 to +150 300 Units V V A A A W W C C C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. --Max. 2.5 62.5 Units C/W C/W (c)2003 Fairchild Semiconductor Corporation SGS5N150UF Rev. B SGS5N150UF Electrical Characteristics of IGBT Symbol Parameter TC = 25C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ICES IGES Collector-Emitter Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 1500 ------1.0 100 V mA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 5mA, VCE = VGE IC = 5A, VGE = 10V 2.0 -3.0 4.7 4.0 5.5 V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 10V, VGE = 0V, f = 1MHz ---780 130 70 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 600 V IC = 5A RG =10 VGE = 10V Inductive Load TC = 25C VCE = 600 V, IC = 5A VGE = 10V ----------10 15 30 70 190 100 290 30 3 15 --50 120 --580 45 5 25 ns ns ns ns uJ uJ uJ nC nC nC (c)2003 Fairchild Semiconductor Corporation SGS5N150UF Rev. B SGS5N150UF 80 20 V 70 15 V 60 50 40 Tc = 25 Tc = 100 50 Vge=10V 10 V Ic [A] 40 30 20 Ic [A] Vge=5 V 30 20 10 10 0 0 5 10 15 0 20 0 4 8 12 16 20 Vce [V] Vce [V] Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 12 8.0 Vge = 10V 7.5 Vge=10V 10 7.0 8 6.5 Vce(sat) [V] Ic =10A Ic [A] 6 6.0 5.5 5.0 4 2 4.5 0 25 50 75 100 125 150 4.0 20 40 60 80 100 Ic = 5A 120 140 Tc [] Tc [] Fig 3. Maximum Collector Current vs. Case Temperature Fig 4. Saturation Voltage vs. Case Temperature 10 Vcc = 600V Load Current : peak of square wave 10 Thermal Response [Zthjc] 8 0.5 1 0.2 0.1 0.05 0.1 Pdm Load Current [A] 6 4 0.02 0.01 t1 t2 2 Duty cycle : 50% Tc = 100 C Power Dissipation = 12W 0 0.1 1 10 100 1000 o single pulse 0.01 1E-5 1E-4 1E-3 0.01 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC 0.1 1 10 Frequency [kHz] Rectangular Pulse Duration [sec] Fig 5. Load Current vs. Frequency Fig 6. Transient Thermal Impedance of IGBT Junction to Case SGS5N150UF Rev. B (c)2003 Fairchild Semiconductor Corporation SGS5N150UF 1200 10 1000 Common Emitter RL = 120, VCC = 600V TC = 25 C o [V] 800 Cies 8 Capacitance [pF] Gate - Emitter Voltage, V GE 6 600 400 4 200 Coes 0 1 Cres 10 2 0 0 10 20 30 Vce [V] Gate Charge, Qg [nC] Fig 7. Typical Capacitance vs. Collector to Emitter Voltage 600 Vcc = 600V Ic = 5A 500 Esw Fig 8. Typical Gate Charge Characteristic 1200 Vcc = 600V Rg = 10 Vge = 10V 1000 Ic = 10A Energy [uJ] Eon 300 Energy [uJ] 400 800 600 Ic = 5A 200 Eoff 400 Ic = 3A 100 0 5 10 15 20 25 30 200 20 40 60 80 100 Rg [] Tc [] Fig 9. Typical Switching Loss vs. Gate Resistance 1.2 Vcc = 600V Rg = 10 Tc = 100 1.0 Esw Fig 10. Typical Switching Loss vs. Case Temperature 10 0.8 Energy [mJ] 0.6 Eon Eoff 0.4 Safe Operating Area Vge = 20V, Tc = 100 1 4 6 8 10 1 10 100 1000 0.2 Ic [A] Ic [A] Vce [V] Fig 11. Typical Switching Loss vs. Collector Current (c)2003 Fairchild Semiconductor Corporation Fig 12. Turn-Off SOA SGS5N150UF Rev. B SGS5N150UF Package Dimension TO-220F (FS PKG CODE AQ) 3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70) 6.68 0.20 15.80 0.20 (1.00x45) MAX1.47 9.75 0.30 0.80 0.10 (3 ) 0 0.35 0.10 2.54TYP [2.54 0.20] #1 0.50 -0.05 2.54TYP [2.54 0.20] 4.70 0.20 +0.10 2.76 0.20 9.40 0.20 Dimensions in Millimeters (c)2003 Fairchild Semiconductor Corporation SGS5N150UF Rev. B 15.87 0.20 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) CoolFETTM FASTrTM CROSSVOLTTM FRFETTM DOMETM GlobalOptoisolatorTM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM Across the board. Around the worldTM The Power FranchiseTM DISCLAIMER ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2003 Fairchild Semiconductor Corporation Rev. I2 |
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